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| 7MBR75SD060 PIM/Built-in converter with thyristor and brake (S series) 600V / 75A / PIM Features * Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit IGBT Modules Applications * Inverter for Motor Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Repetitive peak reverse voltage(Diode) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge 0n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP PC VRRM VDRM VRRM IT(AV) ITSM Tjw VRRM IO IFSM I2t Tj Tstg Viso Continuous 1ms 1 device Condition Rating 600 20 75 150 75 300 600 20 50 100 200 600 800 800 75 750 125 800 75 525 1378 +150 -40 to +125 AC 2500 AC 2500 1.7 *1 Unit V V A A A W V V A A W V V V A A C V A A A 2s C C V V N*m Brake Inverter Continuous 1ms 1 device Thyristor 50Hz/60Hz sine wave Tj=125C, 10ms half sine wave Converter 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave Junction temperature (except Thyristor) Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque AC : 1 minute *1 Recommendable value : 1.3 to 1.7 N*m (M4) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26 should be connected together and shorted to copper base. IGBT Module Electrical characteristics (Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter 7MBR75SD060 Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM IDM IRRM IGT VGT VTM VFM IRRM R B Condition VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=75mA VGE=15V, Ic=75A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=300V IC=75A VGE=15V RG=33 IF=75A chip terminal IF=75A VCES=600V, VGE=0V VCE=0V, VGE=20V IC=50A, VGE=15V chip terminal VCC=300V IC=50A VGE=15V RG=51 VR=600V VDM=800V VRM=800V VD=6V, IT=1A VD=6V, IT=1A ITM=75A chip terminal IF=75A chip terminal VR=800V T=25C T=100C T=25/50C Characteristics Typ. Max. 200 200 5.5 7.8 8.5 1.8 2.1 2.55 7500 0.45 0.25 0.40 0.05 1.7 2.0 1.2 0.6 1.0 0.35 2.7 300 200 200 2.55 1.2 0.6 1.0 0.35 200 1.0 1.0 100 2.5 1.18 Unit A nA V V pF s Min. Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage V ns A nA V s Turn-on time Turn-off time Reverse current off-state current Reverse current Gate trigger current Gate trigger voltage On-state voltage Forward on voltage 1.8 2.05 0.45 0.25 0.40 0.05 Brake Thyristor Converter 1.1 1.2 1.1 1.2 5000 495 3375 A mA mA mA V V V Thermistor Reverse current Resistance B value 1.5 200 520 3450 A K 465 3305 Thermal resistance Characteristics Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Thyristor Converter Diode With thermal compound Characteristics Typ. Max. 0.42 0.90 0.63 0.56 0.70 0.05 Unit Thermal resistance ( 1 device ) Rth(j-c) C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.) 7MBR75SD060 200 200 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.) VGE= 20V 150 15V 12V 150 VGE= 20V 15V 12V Collector current : Ic [ A ] 100 Collector current : Ic [ A ] 100 50 10V 50 10V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] 200 [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 10 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.) Tj= 25C 150 Tj= 125C Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 100 4 50 Ic=150A 2 Ic= 75A Ic= 37.5A 0 0 1 2 3 4 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 30000 500 [ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=75A, Tj= 25C 25 10000 Capacitance : Cies, Coes, Cres [ pF ] 300 15 1000 Coes Cres 200 10 100 5 100 0 5 10 15 20 25 30 35 0 0 100 200 300 400 0 500 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] Cies Collector - Emitter voltage : VCE [ V ] 400 20 IGBT Module 7MBR75SD060 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=33, Tj= 25C 1000 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg= 33, Tj= 125C ton toff ton toff Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] tr tr 100 100 tf tf 10 0 50 100 150 10 0 50 100 150 Collector current : Ic [ A ] Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=75A, VGE=15V, Tj= 25C 5000 8 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=33 ton Switching time : ton, tr, toff, tf [ nsec ] 1000 toff tr Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon(125C) 6 Eoff(125C) Eon(25C) 4 Eoff(25C) 100 tf 2 Err(125C) Err(25C) 10 10 100 300 0 0 50 100 150 Gate resistance : Rg [ ] Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=75A, VGE=15V, Tj= 125C 15 800 [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=33, Tj<=125C Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon 700 600 10 Collector current : Ic [ A ] 500 400 Eoff 5 SCSOA (non-repetitive pulse) 300 200 100 Err 0 10 100 300 0 0 200 400 600 800 RBSOA (Repetitive pulse) Gate resistance : Rg [ ] Collector - Emitter voltage : VCE [ V ] IGBT Module 7MBR75SD060 [ Inverter ] Forward current vs. Forward on voltage (typ.) 200 300 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=33 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 150 Tj=125C trr(125C) 100 Forward current : IF [ A ] Tj=25C trr(25C) Irr(125C) Irr(25C) 100 50 0 0 1 2 3 10 0 50 100 150 Forward on voltage : VF [ V ] Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) 200 200 [ Thyristor ] On-state current vs. On-state voltage (typ.) Tjw= 125C 100 150 Tjw= 25C 100 Instantaneous on-state current [ A ] 2.0 Tj= 25C Tj= 125C Forward current : IF [ A ] 10 50 5 0 0.0 0.4 0.8 1.2 1.6 2 0.0 0.4 0.8 1.2 1.6 2.0 Forward on voltage : VFM [ V ] Instantaneous on-state voltage [ V ] Transient thermal resistance 5 200 100 [ Thermistor ] Temperature characteristic (typ.) Thermal resistanse : Rth(j-c) [ C/W ] 1 Resistance : R [ k ] 1 FWD[Inverter] Conv. Diode IGBT[Brake] Thyristor IGBT[Inverter] 10 0.1 1 0.01 0.001 0.01 0.1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Pulse width : Pw [ sec ] Temperature [ C ] IGBT Module 7MBR75SD060 120 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.) [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.) 120 VGE= 20V 15V 100 12V 100 VGE= 20V 15V 12V Collector current : Ic [ A ] 80 Collector current : Ic [ A ] 80 60 60 40 40 10V 20 10V 20 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 120 10 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.) Tj= 25C 100 Tj= 125C 80 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 60 4 40 Ic=100A 2 Ic= 50A Ic= 25A 20 0 0 1 2 3 4 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 20000 500 [ Brake ] Dynamic Gate charge (typ.) Vcc=300V, Ic=50A, Tj= 25C 25 10000 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 400 20 Cies 300 15 1000 200 10 Coes Cres 100 5 100 0 5 10 15 20 25 30 35 0 0 50 100 150 200 250 0 300 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] IGBT Module Outline Drawings, mm 7MBR75SD060 Marking : White Marking : White Equivalent Circuit Schematic [ Converter ] 21 (P) [ Thyristor ] 26 [ Brake ] 22(P1) [ Inverter ] [ Thermistor ] 8 25 20 (Gu) 18 (Gv ) 16 (Gw) 9 1(R) 2(S) 3(T) 19(Eu) 7(B) 17(Ev ) 4(U) 15(Ew) 5(V) 6(W) 14(Gb) 23(N) 24(N1) 13(Gx) 12(Gy ) 11(Gz) 10(En) |
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